Silicon Photonics Materials Development Expert

Position Overview:

We are seeking a highly skilled and motivated R&D Engineer with expertise in new material systems and devices for our existing  Silicon Photonics process platforms. The successful candidate brings key knowledge on the fabrication  and integration of photonic devices incorporating specialized materials such as Lithium Niobate (LiNbO3), Barium Titanate (BaTiO3), organic materials, Silicon Germanium (SiGe) or photonic device process architecture experience of Germanium Avalanche Photodiodes (Ge APDs), SiGe photodetectors, and III-V semiconductor lasers or semiconductor optical amplifiers (SOAs). The candidate will play a key role in advancing our research and development efforts towards new ultra-high speed transceiver, integrated high speed detectors, multi-wavelength sources or neural network architectures based on our process platforms.

Key Responsibilities:

• Lead the development and optimization of fabrication processes for Silicon Photonics components utilizing specialized materials to match the requirements of future application scenarios.
• Work closely with design, fabrication and process engineering teams to implement and refine manufacturing processes, ensuring high yield and reproducibility of photonic devices.
• Conduct experiments and characterize materials and devices to understand their optical and electrical properties, including electro-optic coefficients, modulation bandwidth, signal-to-noise ratio, and responsivity of Ge APDs.
• Collaborate with cross-functional teams to integrate Silicon Photonics components into larger systems and evaluate their performance in real-world applications.
• Stay updated on the latest advancements in materials science and manufacturing technologies, conduct literature reviews, and apply new insights to drive innovation and improve the performance of Silicon Photonics components.

Qualifications:

• PhD. or Master's degree in Electrical Engineering, Materials Science, Photonics, or a related field.
• Strong background in materials science, with expertise in one or more of the following materials: Lithium Niobate (LiNbO3), Barium Titanate (BaTiO3), PZT, Silicon Germanium (SiGe), III-V semiconductors, or organic materials. Alternatively related process knowledge of Ge APDs, integrated SiGe photodetectors, integrated PD or APDelectro-optic modulators or for multi-wavelength sources is required.
• Basic knowledge of Silicon Photonics device concepts is a plus.